Researchers Develop New Germanium-Tin Transistor as Alternative to Silicon
Scientists at Forschungszentrum Jülich have fabricated a new type of transistor from a germanium–tin alloy that has several advantages over conventional switching elements. Charge carriers can move faster in the material than in silicon or germanium, which enables lower voltages in operation. The transistor thus appears to be a promising candidate for future low-power, high-performance chips, and possibly also for the development of future of quantum computers. JARA-FIT scientists Prof. Detlef Grützmacher and Prof. Joachim Knoch were involved in the development.