Institute of Solid State Research - Quantum-Theory of Materials (IFF-1), Forschungszentrum Jülich

The analysis and computation of electronic properties of solid-state systems relevant for basic science and practical applications in collaboration with experimentalists is the hallmark of our research. An important asset of our institute is the competence in developing conceptual and computational methods (density functional theory and beyond, wave-packet propagation, diagram techniques). Emphasis is on the investigation of complex magnetism, magnetism in reduced dimensions, spin-dependent electronic transport phenomena, collective excitations and quasi-particles. A second research theme is nano-scale tribology, friction, adhesion, plastic deformation. Computational materials science research is established by combining first-principles results with macroscopic methods (molecular dynamics, Monte Carlo).

Institute of Solid State Research - Scattering Methods (IFF-4), Forschungszentrum Jülich

At the Institute of Scattering Methods, we focus on the investigation of structural and magnetic order, fluctuations and excitations in complex or nanostructured magnetic systems and highly correlated electron systems. Our research is directed at obtaining a microscopic atomic understanding based on fundamental interaction mechanisms. The aim is to relate this microscopic information to macroscopic physical properties. To achieve this ambitious goal, we employ the most advanced synchrotron X-ray and neutron scattering methods and place great emphasis on the complementary use of these two probes. Some of our efforts are devoted to dedicated sample preparation and characterization from thin films and multilayers via nano-patterned structures to single crystals for a wide range of materials from metals to oxides.

Institute of Bio- and Nanosystems – Semiconductor Nanoelectronics (IBN-1), Forschungszentrum Jülich

The institute’s research activities are based on its competence in semiconductor heterostructure and nanostructure research, both in fundamental and device physics as well as in material and process development. They address three major fields. (1) Si-CMOS technology: novel materials and new device concepts are used to drive CMOS to its limits. (2) III-V and III-nitride semiconductors: high frequency devices are developed up to and into the terahertz range. (3) Nanostructures for quantum electronics: devices based on the tunneling effect and ferromagnetic/semiconductor hybrid structures are investigated, the latter particularly in view of spintronic applications.

Institut für Theoretische Physik C, RWTH Aachen